Processing and Characterization of 300 mm Argon-Annealed Wafers
نویسندگان
چکیده
High nitrogen doped 300 mm silicon wafers annealed in 100 % argon ambient were investigated whether modified pulling conditions will lead to improved slip behavior and homogeneous radial oxygen precipitation. It turned out that increasing of the cooling rate during crystal pulling is beneficial on these wafer defect parameters. The void morphology was investigated by TEM and oxygen precipitation profiler measurements. Remarkably changes in the morphology of grown-in defects (voids) with varying the ingot cooling rate of these crystals can be observed.
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